irfp450/fi irfw450 n - channel enhancement mode power mos transistors preliminary data n typical r ds(on) = 0.33 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c applications n high current, high speed switching n switch mode power supplies (smps) n chopper regulators, converters, motor control, lighting for industrial and consumer environment internal schematic diagram type v dss r ds(on) i d irfp450 IRFP450FI irfw450 500 v 500 v 500 v <0.4 w <0.4 w <0.4 w 14 a 9a 14 a july 1993 absolute maximum ratings symbol parameter value unit irfp/irfw450 IRFP450FI v ds drain-source voltage (v gs = 0) 500 500 v v dgr drain- gate voltage (r gs =20k w ) 500 500 v v gs gate-source voltage 20 v i d drain current (cont.) at t c =25 o c149a i d drain current (cont.) at t c = 100 o c8.85.6a i dm ( ? ) drain current (pulsed) 56 56 a p tot total dissipation at t c =25 o c 180 70 w derating factor 1.44 0.56 w/ o c v iso insulation withstand voltage (dc) ? 4000 v t st g storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ) pulse width limited by safe operating area 1 2 3 to-218 isowatt218 1 2 3 1 2 3 to-247 1/10 free datasheet http://www.0pdf.com
thermal data to-218/to-247 isowatt218 r thj-case thermal resistance junction-case max 0.69 1.78 o c/w r thj-amb r th c-s t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 30 0.1 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d <1%) 14 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =50v) 760 mj e ar repetitive avalanche energy (pulse width limited by t j max, d <1%) 18 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d <1%) 8a electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs = 0 500 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds = max rating x 0.8 t c =125 o c 250 1000 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =250 m a234v r ds(on) static drain-source on resistance v gs =10v i d =7.9a 0.33 0.4 w i d(on) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 14 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =7.9a 6 10 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 2200 340 165 3000 440 220 pf pf pf irfp450/fi - irfw450 2/10 free datasheet http://www.0pdf.com
electrical characteristics (continued) switching resistive load symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on time rise time turn-off delay time fall time v dd =210v i d =7a r i =4.7 w (see test circuit) 25 55 170 100 35 75 225 135 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge i d =13a v gs =10v v dd = max rating x 0.8 (see test circuit) 145 15 75 190 nc nc nc source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 14 56 a a v sd ( * ) forward on voltage i sd =14a v gs =0 1.4 v t rr q rr reverse recovery time reverse recovery charge i sd = 14 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c 700 17 ns m c ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area for to-218 and to-247 safe operating area for isowatt218 irfp450/fi - irfw450 3/10 free datasheet http://www.0pdf.com
thermal impedance for to-218 and to-247 derating curve for to-218 and to-247 output characteristics thermal impedance for isowatt218 derating curve for isowatt218 transfer characteristics irfp450/fi - irfw450 4/10 free datasheet http://www.0pdf.com
transconductance static drain-source on resistance maximum drain current vs temperature gate charge vs gate-source voltage normalized gate threshold voltage vs temperature capacitance variations irfp450/fi - irfw450 5/10 free datasheet http://www.0pdf.com
normalized on resistance vs temperature source-drain diode forward characteristics unclamped inductive load test circuit unclamped inductive waveforms switching time test circuit gate charge test circuit irfp450/fi - irfw450 6/10 free datasheet http://www.0pdf.com
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.208 a1 2.87 0.113 a2 1.5 2.5 0.059 0.098 b 1 1.4 0.039 0.055 b1 2.25 0.088 b2 3.05 3.43 0.120 0.135 c 0.4 0.8 0.015 0.031 d 20.4 21.18 0.803 0.833 e 5.43 5.47 0.213 0.215 e 15.3 15.95 0.602 0.628 l 15.57 0.613 l1 3.7 4.3 0.145 0.169 q 5.3 5.84 0.208 0.230 p 3.5 3.71 0.137 0.146 d q a a2 a1 c e e b1 b b2 l l1 to-247 mechanical data irfp450/fi - irfw450 7/10 free datasheet http://www.0pdf.com
dim. mm inch min. typ. max. min. typ. max. a 4.7 4.9 0.185 0.193 c 1.17 1.37 0.046 0.054 d 2.5 0.098 e 0.5 0.78 0.019 0.030 f 1.1 1.3 0.043 0.051 g 10.8 11.1 0.425 0.437 h 14.7 15.2 0.578 0.598 l2 16.2 0.637 l3 18 0.708 l5 3.95 4.15 0.155 0.163 l6 31 1.220 r 12.2 0.480 4 4.1 0.157 0.161 r a c d e h f g l6 l3 l2 l5 123 to-218 (sot-93) mechanical data p025a irfp450/fi - irfw450 8/10 free datasheet http://www.0pdf.com
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.210 0.222 c 3.3 3.8 0.130 0.149 d 2.9 3.1 0.114 0.122 d1 1.88 2.08 0.074 0.081 e 0.45 1 0.017 0.039 f 1.05 1.25 0.041 0.049 g 10.8 11.2 0.425 0.441 h 15.8 16.2 0.622 0.637 l1 20.8 21.2 0.818 0.834 l2 19.1 19.9 0.752 0.783 l3 22.8 23.6 0.897 0.929 l4 40.5 42.5 1.594 1.673 l5 4.85 5.25 0.190 0.206 l6 20.25 20.75 0.797 0.817 m 3.5 3.7 0.137 0.145 n 2.1 2.3 0.082 0.090 u 4.6 0.181 l1 a c d e h g m f l6 123 u l5 l4 d1 n l3 l2 isowatt218 mechanical data p025c irfp450/fi - irfw450 9/10 free datasheet http://www.0pdf.com
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a irfp450/fi - irfw450 10/10 free datasheet http://www.0pdf.com
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